NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal Applications

Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be highly dependent on the type of ESD stress. In particular, the device´s ESD robustness does not scale with the device width, and this condition is substantially aggravated during the International Electrotechnical Commission (IEC) 61000-4-2 stress condition. IEC 61000-4-2 is a system-level ESD standard increasingly being adopted in the industry for ESD robustness assessment at the integrated circuit level. A comprehensive evaluation under the IEC 61000-4-2 stress impacting precision circuit designs is introduced in this letter for variable width LDMOS devices fabricated in a 0.18-μm bipolar-CMOS-DMOS process for 40-V mixed-signal applications.