DocumentCode :
1303686
Title :
Single-Crystalline Silicon-Based Heterojunction Photodiode Arrays on Flexible Plastic Substrates
Author :
Sangwook Lee ; Juree Hong ; Ja Hoon Koo ; Seulah Lee ; Kwanghyun Lee ; Seongil Im ; Taeyoon Lee
Author_Institution :
Nanobio Device Lab., Yonsei Univ., Seoul, South Korea
Volume :
58
Issue :
10
fYear :
2011
Firstpage :
3329
Lastpage :
3334
Abstract :
A silicon-based photodiode array was fabricated on a flexible polyethylene terephthalate substrate using a transfer printing technique. A heterojunction structure composed of a 15-nm-thick highly doped hydrogenated amorphous-silicon (n+ a-Si:H) layer and a 3-μm-thick p-type single-crystal silicon (p c-Si) membrane layer was adopted as the active layer of the flexible photodiode. The highly ordered photodiode array formed on the flexible substrate exhibited superior stability in electrical properties under bent conditions with no mechanical deformation. The variation of the spectral quantum efficiency (QE) under short-wavelength light illumination (λ ≤ 580 nm) was in excellent agreement with that of a heterojunction photodiode composed of a-Si:H and a bulk c-Si substrate. Relatively low QE values were observed under longer wavelength (λ ≥ 600 nm) illumination due to the finite thickness of the active layer. The C-V measurement results of the fabricated photodiode array were in accordance with the abrupt junction model. A closer inspection of the junction area of the device using high-resolution cross-sectional transmission micrograph exhibited an interface depth of 2 ± 0.5 nm, which is unavoidable in plasma-enhanced a-Si:H deposition processes.
Keywords :
amorphous semiconductors; elemental semiconductors; flexible electronics; photodiodes; semiconductor device measurement; semiconductor heterojunctions; silicon; Si:H; abrupt junction model; active layer; bent conditions; electrical properties; flexible photodiode; flexible plastic substrates; flexible polyethylene terephthalate substrate; heterojunction structure; high-resolution cross-sectional transmission micrograph; highly doped hydrogenated amorphous-silicon layer; interface depth; mechanical deformation; p-type single-crystal silicon membrane layer; plasma-enhanced deposition process; short-wavelength light illumination; single-crystalline silicon-based heterojunction photodiode arrays; size 15 nm; size 3 mum; spectral quantum efficiency; transfer printing technique; Heterojunctions; Lighting; Photodiodes; Photovoltaic cells; Positron emission tomography; Silicon; Substrates; Flexible device; heterojunction; silicon-based photodiode; transfer printing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2162241
Filename :
5993528
Link To Document :
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