DocumentCode :
1303698
Title :
The behavior of narrow-width SOI MOSFETs with MESA isolation
Author :
Wang, Hongmei ; Chan, Mansun ; Wang, Yangyuan ; Ko, Ping K.
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Volume :
47
Issue :
3
fYear :
2000
fDate :
3/1/2000 12:00:00 AM
Firstpage :
593
Lastpage :
600
Abstract :
Narrow-width effects in thin-film silicon on insulator (SOI) MOSFETs with MESA isolation technology have been studied theoretically and experimentally. As the channel width of the MOSFET is scaled down, the gate control of the channel potential is enhanced. It leads to the suppression of drain current dependence on substrate bias and punchthrough effect in narrow-width devices. The variation of threshold voltage with the channel width is also studied and is found to have a strong dependence on thickness of silicon film, interface charges in the buried oxide and channel type of SOI MOSFETs
Keywords :
MOSFET; buried layers; isolation technology; silicon-on-insulator; MESA isolation; Si-SiO; buried oxide; channel potential; channel width; drain current; interface charges; narrow-width SOI MOSFET; punchthrough effect; substrate bias; thin-film; threshold voltage; Fabrication; Helium; Isolation technology; MOSFET circuits; Microelectronics; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.824735
Filename :
824735
Link To Document :
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