A probe detector for defectivity assessment in p-n junctions

In this paper, we present a process probe capable of measuring the avalanche ignition rate of the generation centers, in order to investigate some process-dependent morphological properties of p-n junctions. In particular, we report a nonlinear dependence of the defectivity with the area of circular junctions, which can be ascribed to a radially growing density of generation centers, like dopant clusters. This hypothesis has been verified by means of both microscopic inspection of the probes and comparison with alternative probe geometries. Technological hints are finally provided to counteract the defectivity, thus leading to potential improvements in the fabrication of microelectronic devices