Title :
A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFETs
Author :
çelik-Butler, Zeynep ; Vasina, Petr ; Amarasinghe, Nuditha Vibhavie
Author_Institution :
Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
fDate :
3/1/2000 12:00:00 AM
Abstract :
Random telegraph signals (RTS) have been measured in the drain to source voltage of W×L=0.97×0.15 μm2 medium-doped drain (MDD) n-MOSFET´s. The depth of the trapping center in the oxide is found from the gate voltage dependence of the emission and capture times. The difference in the drain voltage dependence of the capture and emission times between the forward and reverse modes is utilized to find the position of the trap in the channel with respect to the source
Keywords :
MOSFET; electron traps; semiconductor device noise; Si; capture time; drain-source voltage; emission time; forward mode; gate voltage dependence; oxide trap position; random telegraph signals; reverse mode; submicron MOSFETs; Current measurement; Electron traps; Energy capture; Instruments; Low-frequency noise; MOSFET circuits; Noise measurement; Telegraphy; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
