DocumentCode
1303741
Title
A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFETs
Author
çelik-Butler, Zeynep ; Vasina, Petr ; Amarasinghe, Nuditha Vibhavie
Author_Institution
Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
Volume
47
Issue
3
fYear
2000
fDate
3/1/2000 12:00:00 AM
Firstpage
646
Lastpage
648
Abstract
Random telegraph signals (RTS) have been measured in the drain to source voltage of W×L=0.97×0.15 μm2 medium-doped drain (MDD) n-MOSFET´s. The depth of the trapping center in the oxide is found from the gate voltage dependence of the emission and capture times. The difference in the drain voltage dependence of the capture and emission times between the forward and reverse modes is utilized to find the position of the trap in the channel with respect to the source
Keywords
MOSFET; electron traps; semiconductor device noise; Si; capture time; drain-source voltage; emission time; forward mode; gate voltage dependence; oxide trap position; random telegraph signals; reverse mode; submicron MOSFETs; Current measurement; Electron traps; Energy capture; Instruments; Low-frequency noise; MOSFET circuits; Noise measurement; Telegraphy; Time measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.824742
Filename
824742
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