Title :
Effects of zinc doping in DFB lasers emitting at 1.3 and 1.55 mu m
Author :
Sugano, M. ; Sudo, H. ; Soda, H. ; Kusunoki, Takashi ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Reports on the performance of GaInAsP/InP DFB lasers with Zn-doped active region. At both 1.3 and 1.55 mu m the authors achieved a large bandwidth owing to the increased differential gain. The carrier lifetime of the lasers decreased with doping level. The decreased carrier lifetime had the effect of reducing the pattern effect, and they could obtain a clear eye opening with 4 Gbit/s NRZ modulation.
Keywords :
III-V semiconductors; carrier lifetime; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor doping; semiconductor junction lasers; 1.3 micron; 1.55 micron; 4 Gbit/s; DFB lasers; GaInAsP:Zn-InP:Zn; NRZ modulation; carrier lifetime; carrier lifetime reduction; clear eye opening; increased differential gain; large bandwidth; pattern effect reduction; performance; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900065
