Title :
High quality AlGaSb, AlGaAsSb and InGaAsSb epitaxial layers grown by liquid-phase epitaxy from Sb-rich melts
Author :
Deryagin, A.G. ; Faleev, N.N. ; Smirnov, V.M. ; Sokolovskii, G.S. ; Vasil´ev, V.I.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
12/1/1997 12:00:00 AM
Abstract :
The paper is concerned with the study of the growth of AlGaSb, AlGaAsSb and InGaAsSb epilayers, which are lattice-matched to GaSb, by means of liquid-phase epitaxy (LPE) from Sb-rich melts. The obtained composition ranges were 0.02⩽x⩽0.20 for AlxGa1-x Sb, AlxGa1-xAsySb1-x epilayers and 0.04⩽x⩽0.24 for InxGa1-xAs ySb1-y layers. In the photoluminescence spectra measured on AlGaSb and GaInAsSb direct-gap solid solutions, only peaks with a maximum corresponding to the bandgap were observed. No long-wavelength peaks, which correspond to defects such as VGa+GaSb and are typical of GaSb and related solid solutions grown from In- or Ga-rich melts, were found in PL spectra of the epilayers obtained
Keywords :
aluminium compounds; indium compounds; liquid phase epitaxial growth; optical fabrication; optical films; photoluminescence; solid solutions; AlxGa1-xAsySb1-x epilayers; AlGaAsSb; AlGaSb; InxGa1-xAsySb1-y layers; InGaAsSb; PL spectra; Sb-rich melts; direct-gap solid solutions; epitaxial layers; lattice-matched; liquid-phase epitaxy; mid-IR optoelectronic devices; optical fabrication; photoluminescence spectra; solid solutions;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19971456
