Title :
Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design
Author :
Wenliang Zhang ; Yangjun Zhu ; Shuojin Lu ; Xiaoli Tian ; Yuan Teng
Author_Institution :
Dept. of Silicon Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Abstract :
In this letter, a novel design concept for the edge termination of reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed and evaluated. The new design can be easily realized by backside layout design without additional processes and manufacturing cost. Simulation results show that the proposed method can reduce the total amount of injected holes by 94.6% and 81.5% in the insulated gate bipolar transistor (IGBT) and diode modes, respectively. Thus, the current crowding problem in the edge termination when RC-IGBT device turns OFF in IGBT mode or recovers in diode mode is suppressed.
Keywords :
insulated gate bipolar transistors; integrated circuit layout; power bipolar transistors; power field effect transistors; power integrated circuits; semiconductor device reliability; backside layout design; design concept; edge termination; insulated gate bipolar transistor; junction termination reliability; reverse conducting IGBT; Charge carrier density; Current density; Insulated gate bipolar transistors; Reliability; Robustness; Current crowding; current crowding; edge termination; reliability; reverse-conducting insulated gate bipolar transistor (RC-IGBT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2364301
