Title :
Versatile silicon bipolar XOR gate for signal processing up to 8 Gbit/s
Author :
Hauenschild, J. ; Rein, H.-M. ; Schmidt, L. ; Worner, K.
Author_Institution :
Fakultat fur Elektrotech., Ruhr-Univ. Bochum, West Germany
Abstract :
A high-speed XOR gate is described, which is well suited for several applications. The circuit was fabricated with a 1.25 mu m double-polysilicon bipolar technology. It operates up to at least 8 Gbit/s, which is by far the highest operating speed reported so far for bipolar XOR gates.
Keywords :
bipolar integrated circuits; elemental semiconductors; integrated logic circuits; logic gates; silicon; 1.25 micron; 8 Gbit/s; Si; double-polysilicon bipolar technology; high-speed XOR gate; signal processing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900078
