Title :
Low current plasma effect optical switch on InP
Author :
Muller, G. ; Stoll, L. ; Schulte-Roth, G. ; Wolff, U.
Author_Institution :
Siemens AG, Res. Lab. for Mater. Sci. & Electron., Muenchen, West Germany
Abstract :
Optical InP-GaInAsP directional coupler switches with a total length of 2 mm have been fabricated and operated by carrier injection. Switching is achieved at a very low injection current of 4 mA. For both switching states a crosstalk suppression exceeding 20 dB is obtained. In addition, the insertion loss estimated from the loss contributions of waveguides, bends and free carriers is as low as 1.3 dB.
Keywords :
III-V semiconductors; crosstalk; directional couplers; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical communication equipment; optical couplers; optical switches; solid-state plasma; 1.3 dB; 2 mm; 4 mA; III-V semiconductors; InP-GaInAsP; carrier injection; crosstalk suppression; directional coupler switches; insertion loss; integrated optoelectronics; low injection current; plasma effect optical switch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900079
