DocumentCode
1304253
Title
10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC
Author
Akagi, J. ; Kuriyama, Yasuhiko ; Morizuka, K. ; Tsuda, Kazuhiko ; Obara, M. ; Yamakawa, Hiroshi
Author_Institution
R&D Center & Komukai Works, Toshiba Corp., Kawasaki, Japan
Volume
26
Issue
2
fYear
1990
Firstpage
122
Lastpage
124
Abstract
A decision circuit IC applicable to 10 Gbit/s optical communication systems has been implemented with AlGaAs/GaAs heterojunction bipolar transistors (HBTs). A 10 Gbit/s operation of the D-type M/S flip-flop decision circuit was observed with a clear eye diagram. A good sensitivity of 13 mVpp and a wide phase margin of 300 degrees at 5 Gbit/s were also obtained.
Keywords
III-V semiconductors; aluminium compounds; bipolar integrated circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; 10 Gbit/s; 5 Gbit/s; AlGaAs-GaAs; D-type M/S flip-flop; HBTs; decision circuit IC; heterojunction bipolar transistor; logic circuits; optical communication systems;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900084
Filename
82499
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