Title :
10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC
Author :
Akagi, J. ; Kuriyama, Yasuhiko ; Morizuka, K. ; Tsuda, Kazuhiko ; Obara, M. ; Yamakawa, Hiroshi
Author_Institution :
R&D Center & Komukai Works, Toshiba Corp., Kawasaki, Japan
Abstract :
A decision circuit IC applicable to 10 Gbit/s optical communication systems has been implemented with AlGaAs/GaAs heterojunction bipolar transistors (HBTs). A 10 Gbit/s operation of the D-type M/S flip-flop decision circuit was observed with a clear eye diagram. A good sensitivity of 13 mVpp and a wide phase margin of 300 degrees at 5 Gbit/s were also obtained.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; 10 Gbit/s; 5 Gbit/s; AlGaAs-GaAs; D-type M/S flip-flop; HBTs; decision circuit IC; heterojunction bipolar transistor; logic circuits; optical communication systems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900084
