• DocumentCode
    1304253
  • Title

    10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC

  • Author

    Akagi, J. ; Kuriyama, Yasuhiko ; Morizuka, K. ; Tsuda, Kazuhiko ; Obara, M. ; Yamakawa, Hiroshi

  • Author_Institution
    R&D Center & Komukai Works, Toshiba Corp., Kawasaki, Japan
  • Volume
    26
  • Issue
    2
  • fYear
    1990
  • Firstpage
    122
  • Lastpage
    124
  • Abstract
    A decision circuit IC applicable to 10 Gbit/s optical communication systems has been implemented with AlGaAs/GaAs heterojunction bipolar transistors (HBTs). A 10 Gbit/s operation of the D-type M/S flip-flop decision circuit was observed with a clear eye diagram. A good sensitivity of 13 mVpp and a wide phase margin of 300 degrees at 5 Gbit/s were also obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; 10 Gbit/s; 5 Gbit/s; AlGaAs-GaAs; D-type M/S flip-flop; HBTs; decision circuit IC; heterojunction bipolar transistor; logic circuits; optical communication systems;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900084
  • Filename
    82499