Title :
1.55 mu m high-gain polarisation-insensitive semiconductor travelling wave amplifier with low driving current
Author :
Mersali, B. ; Gelly, G. ; Accard, A. ; Lafragette, J.-L. ; Doussiere, P. ; Lambert, Mathieu ; Fernier, B.
Author_Institution :
Lab. de Marcoussis, France
Abstract :
Polarisation-insensitive GaInAsP-InP semiconductor amplifiers have been fabricated from gas source molecular beam epitaxy (GSMBE) and a BH laser with multilayer coatings. The TE and TM mode gains are equal to within 1 dB and an average internal gain of 28 dB is obtained at only 50 mA forward current.
Keywords :
III-V semiconductors; amplifiers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; molecular beam epitaxial growth; optical communication equipment; semiconductor growth; semiconductor junction lasers; 1.55 micron; 28 dB; 50 mA; BH laser; GaInAsP-InP; III-V semiconductors; TE mode; TM mode gains; average internal gain; gas source molecular beam epitaxy; high-gain; low driving current; multilayer coatings; optical communication equipment; polarisation-insensitive; semiconductor lasers; semiconductor travelling wave amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900085
