Title :
GaAs MESFET amplifiers fabricated on InP substrates
Author :
Jichai Jeong ; Vella-Coleiro, G.P. ; Yee, C.M.L.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3 dB bandwidth of 1 GHz have been measured from the amplifiers.
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; microwave amplifiers; substrates; wideband amplifiers; 1 GHz; 13 GHz; 200 mS; 6 to 12 dB; GaAs-InP; HSF; III-V semiconductors; InP substrates; MMIC; OEIC; broadband operation; chloride close proximity reactor; cutoff frequency; extrinsic maximum transconductance; microwave amplifiers; optoelectronic integrated circuits; single stage type;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900092
