DocumentCode
1304307
Title
GaAs MESFET amplifiers fabricated on InP substrates
Author
Jichai Jeong ; Vella-Coleiro, G.P. ; Yee, C.M.L.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
26
Issue
2
fYear
1990
Firstpage
135
Lastpage
136
Abstract
Single stage amplifiers have been fabricated using GaAs MESFETs grown on InP substrates by a chloride close proximity reactor (CPR) system. The FETs have an extrinsic maximum transconductance of 200 mS/mm and a cutoff frequency of unity short circuit current gain of 13 GHz. A gain of 6 to 12 and a 3 dB bandwidth of 1 GHz have been measured from the amplifiers.
Keywords
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; microwave amplifiers; substrates; wideband amplifiers; 1 GHz; 13 GHz; 200 mS; 6 to 12 dB; GaAs-InP; HSF; III-V semiconductors; InP substrates; MMIC; OEIC; broadband operation; chloride close proximity reactor; cutoff frequency; extrinsic maximum transconductance; microwave amplifiers; optoelectronic integrated circuits; single stage type;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900092
Filename
82507
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