DocumentCode :
1304344
Title :
Investigation of Loading Effect on Power Performance for Planar Gunn Diodes Using Load-Pull Measurement Technique
Author :
Chong Li ; Lok, L.B. ; Khalid, Amir ; Thayne, I.G. ; Cumming, David R. S.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Volume :
21
Issue :
10
fYear :
2011
Firstpage :
556
Lastpage :
558
Abstract :
A one-port load-pull measurement has been carried out in order to investigate the effect of loading on the RF power performance of a planar Gunn diode operating in the transit-time mode at 102 GHz. A W-band manual E-H tuner was applied between a waveguide mixer and a wafer probe to vary the load impedance on the Gunn diode. It has been found that more than 25 dB variation of output power was obtained by systematically adjusting the tuner. By de-embedding the S-parameters of the probe, E-H tuner and mixer, the relationship between RF power and load impedance for the planar Gunn diode was derived. This method is extremely useful for assisting the design of matching networks to improve power output of one-port oscillator devices.
Keywords :
Gunn diodes; S-parameters; impedance matching; measurement systems; mixers (circuits); oscillators; tuning; voltage measurement; waveguides; E-H tuner; RF power performance; W-band manual; frequency 102 GHz; loading effect; one-port load-pull measurement; one-port oscillator device; planar Gunn diode; power performance; transit-time mode; wafer probe; waveguide mixer; Impedance; Mixers; Oscillators; Probes; Radio frequency; Scattering parameters; Tuners; Gunn devices; S-parameters; impedance matching; load-pull measurement;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2011.2163496
Filename :
5995124
Link To Document :
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