Title :
Design and realisation of very high performance 0.2 mu m gate GaAs MESFETs
Author :
Vanbremeersch, J. ; Constant, Eric ; Zimmermann, J. ; Valin, I. ; Godts, P. ; Leroy, Annie
Author_Institution :
Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d´Ascq, France
Abstract :
Based on very simple design criteria, a reliable technological process has been achieved allowing one to realise high performance 0.2 mu m gate GaAs MESFETs characterised by low source and gate access resistances (less than 0.2 Omega mm and 0.25 Omega mm, respectively) and high transconductances (more than 1 S/mm) and exhibiting high current and power gain cut-off frequencies (close to 100 GHz).
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; 0.2 micron; GaAs; MESFETs; design criteria; gate access resistances; power gain cut-off frequencies; source access resistance; transconductances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900103
