Title :
Low-pressure photochemical vapour deposition of silicon dioxide on InP substrates
Author :
Nissim, Y.I. ; Regolini, J.L. ; Bensahel, D. ; Licoppe, C.
Author_Institution :
CNET, Lab. de Bagneux, France
fDate :
4/14/1988 12:00:00 AM
Abstract :
Silicon dioxide films deposited on InP substrates are obtained from a mixture of silane and oxygen gases irradiated with a UV lamp. Deposition rates compatible with industrial processes are obtained for substrate temperatures well below the degradation threshold of InP. Optical and electrical characterisations are performed for InP MISFET applications
Keywords :
CVD coatings; III-V semiconductors; chemical vapour deposition; electronic conduction in insulating thin films; indium compounds; infrared spectra of inorganic solids; insulated gate field effect transistors; insulating thin films; optical properties of substances; semiconductor technology; silicon compounds; substrates; CVD; III-V semiconductors; IR absorption spectrum; InP substrates; MISFET applications; SiO2-InP; UV lamp irradiation; electrical characterisations; low-pressure; photochemical vapour deposition; photodeposition rate; substrate temperatures;
Journal_Title :
Electronics Letters
