Title :
Deep level transient spectroscopy of n-AlGaAs/GaAs high electron mobility transistors
Author :
Goostray, J. ; Thomas, Holly ; Morgan, D.V. ; Kohn, Erhard ; Christou, Alex ; Mottet, Serge
Author_Institution :
Univ. of Wales Coll. of Cardiff, UK
Abstract :
Deep level transient spectroscopy has been used to characterise the traps found in MBE grown n-AlGaAs/GaAs HEMTs. In addition to DX centres two further traps common to different HEMT structures are reported. The authors have identified an electron trap (Ea=0.6 eV) distributed nonuniformly in the AlGaAs donor layer, and an interface state trap (Ea=0.55 eV) located close to the two dimensional electron gas.
Keywords :
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; semiconductor device models; semiconductor epitaxial layers; AlGaAs donor layer; AlGaAs-GaAs; DLTS; DX centres; HEMTs; MBE grown; deep level transient spectroscopy; electron trap; high electron mobility transistors; interface state trap; n-AlGaAs/GaAs; semiconductors; trap characterisation; two dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900108
