Title :
Ultra high transconductance 0.25 mu m gate MESFET with strained InGaAs buffer layer
Author :
Cappy, A. ; Dambrine, G. ; Cordier, Yvon ; Druelle, Y. ; Legry, P.
Author_Institution :
Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve D´´Ascq, France
Abstract :
The authors have successfully fabricated MBE-grown GaAs field effect transistors employing a strained MQW buffer layer. Quarter micron gate device showed transconductance as high as 1.460 mS/mm (900 mS/mm extrinsic) at a current density of 620 mA/mm. The measured fc was 75 GHz. These high transconductances are, to the authors´ knowledge, the best reported for GaAs MESFETs.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor quantum wells; solid-state microwave devices; 0.25 micron; 75 GHz; GaAs MESFETs; current density; cutoff frequency; quarter micron gate; semiconductors; strained InGaAs buffer layer; strained MQW buffer layer; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900109
