Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers

Author

Po-Tsun Liu ; Yi-Teh Chou ; Li-Feng Teng ; Fu-Hai Li ; Chur-Shyang Fuh ; Shieh, H.D.

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

32

Issue

10

fYear

2011

Firstpage

1397

Lastpage

1399

Abstract

A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO:N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.

Keywords

amorphous semiconductors; gallium compounds; indium compounds; nitrogen; sputter deposition; thin film transistors; zinc compounds; BCP; InGaZnO:N; TFT; ambient stability enhancement; amorphous nitrogenated InGaZnO; back-channel passivation; bilayer stack channel layer; optical energy bandgap; sputter-deposition; thin-film transistor; ultraviolet-radiation impact; Atmosphere; Logic gates; Nitrogen; Passivation; Stress; Thin film transistors; InGaZnO (IGZO); in situ back-channel passivation (BCP); nitrogenated InGaZnO (IGZO:N);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2163181

Filename

5995139