Title :
High sensitivity 5 Gbit/s optical receiver module using Si IC and GaInAs APD
Author :
Fujita, S. ; Suzaki, T. ; Matsuoka, Ayumu ; Miyazaki, S. ; Torikai, T. ; Nakata, Tatsuya ; Shikada, Masaaki
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
A 5 Gbit/s optical receiver module was developed by using a wideband transimpedance Si IC and a high gain-bandwidth product GaInAs APD. A 6 GHz bandwidth Si IC utilising a ft=20 GHz Si MMIC process, bare chip mounting of a Si IC and an APD to minimise parasitic capacitance, made it possible to realise high speed operation and high receiver sensitivity of -31.8 dBm.
Keywords :
III-V semiconductors; MMIC; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; receivers; 20 GHz; 5 Gbit/s; 6 GHz; GaInAs; GaInAs APD; Si; Si MMIC; bare chip mounting; high gain-bandwidth product; high receiver sensitivity; high speed operation; optical receiver module; semiconductors; wideband transimpedance Si IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900118
