DocumentCode
1304575
Title
Evaluation of delay-time degradation of low-voltage BiCMOS based on a novel analytical delay-time modeling
Author
Fujishima, Minoru ; Asada, Kunihiro ; Sugano, Takuo
Author_Institution
Dept. of Electron. Eng., Tokyo Univ., Japan
Volume
26
Issue
1
fYear
1991
fDate
1/1/1991 12:00:00 AM
Firstpage
25
Lastpage
31
Abstract
The degradation of delay time of totem-pole BiCMOS, CBiCMOS, and BiNMOS circuits by supply voltage reduction is evaluated by a novel delay-time model. It has been found that base-collector capacitance plays a greater role in determining the delay time than other parasitic capacitances in BiCMOS circuits. It is concluded that when the input signal swings fully from zero to the supply voltage, the minimum supply voltage to guarantee high-speed operation over CMOS circuits is almost the same for the three kinds of BiCMOS circuits. When the input swing is reduced by the base-emitter voltage, however, BiNMOS and CBiCMOS circuits can operate on a lower supply voltage than totem-pole BiCMOS circuits
Keywords
BIMOS integrated circuits; delays; semiconductor device models; BiNMOS; CBiCMOS; analytical delay-time modeling; base-collector capacitance; delay-time degradation; equivalent resistance model; minimum supply voltage; parasitic capacitance; totem-pole BiCMOS; BiCMOS integrated circuits; Current measurement; Degradation; Delay effects; Equations; MOS devices; MOSFETs; Parasitic capacitance; Semiconductor device modeling; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.65706
Filename
65706
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