• DocumentCode
    1304575
  • Title

    Evaluation of delay-time degradation of low-voltage BiCMOS based on a novel analytical delay-time modeling

  • Author

    Fujishima, Minoru ; Asada, Kunihiro ; Sugano, Takuo

  • Author_Institution
    Dept. of Electron. Eng., Tokyo Univ., Japan
  • Volume
    26
  • Issue
    1
  • fYear
    1991
  • fDate
    1/1/1991 12:00:00 AM
  • Firstpage
    25
  • Lastpage
    31
  • Abstract
    The degradation of delay time of totem-pole BiCMOS, CBiCMOS, and BiNMOS circuits by supply voltage reduction is evaluated by a novel delay-time model. It has been found that base-collector capacitance plays a greater role in determining the delay time than other parasitic capacitances in BiCMOS circuits. It is concluded that when the input signal swings fully from zero to the supply voltage, the minimum supply voltage to guarantee high-speed operation over CMOS circuits is almost the same for the three kinds of BiCMOS circuits. When the input swing is reduced by the base-emitter voltage, however, BiNMOS and CBiCMOS circuits can operate on a lower supply voltage than totem-pole BiCMOS circuits
  • Keywords
    BIMOS integrated circuits; delays; semiconductor device models; BiNMOS; CBiCMOS; analytical delay-time modeling; base-collector capacitance; delay-time degradation; equivalent resistance model; minimum supply voltage; parasitic capacitance; totem-pole BiCMOS; BiCMOS integrated circuits; Current measurement; Degradation; Delay effects; Equations; MOS devices; MOSFETs; Parasitic capacitance; Semiconductor device modeling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.65706
  • Filename
    65706