• DocumentCode
    1304673
  • Title

    AlGaAs/GaAs heterojunction bipolar transistors fabricated with various collector-carrier-concentrations

  • Author

    Ota, Yoshiharu ; Hirose, Tatsuya ; Ryoji, A. ; Inada, M.

  • Author_Institution
    Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
  • Volume
    26
  • Issue
    3
  • fYear
    1990
  • Firstpage
    203
  • Lastpage
    205
  • Abstract
    Effects of the collector carrier concentration Nc of AlGaAs/GaAs self-aligned HBT´s with a buried collector on high frequency performances are studied experimentally. fT increases monotonically with Nc, while fmax has a maximum point for the intermediate doping of Nc=5*1016 cm-3.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; AlGaAs-GaAs; HBT; III-V semiconductors; buried collector; collector-carrier-concentrations; heterojunction bipolar transistors; high frequency performances; microwave device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900137
  • Filename
    82555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1304673