• DocumentCode
    1304680
  • Title

    Atmospheric pressure, low temperature (<500 degrees C) UV/ozone oxidation of silicon

  • Author

    Nayar, Vineet ; Patel, Pragati ; Boyd, I.W.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
  • Volume
    26
  • Issue
    3
  • fYear
    1990
  • Firstpage
    205
  • Lastpage
    206
  • Abstract
    The authors report on a new and simple growth technology which is capable of producing ultra-thin oxides ( approximately= 40 AA) on silicon at temperatures below 500 degrees C. Preliminary growth and electrical measurements are discussed.
  • Keywords
    electronic conduction in insulating thin films; insulating thin films; oxidation; semiconductor technology; silicon compounds; 40 AA; 500 degC; O 3; Si; SiO 2-Si; UV/ozone oxidation; atmospheric pressure; electrical measurements; growth technology; low temperature; semiconductor processing; ultra-thin oxides;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900138
  • Filename
    82556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1304680