Title :
Atmospheric pressure, low temperature (<500 degrees C) UV/ozone oxidation of silicon
Author :
Nayar, Vineet ; Patel, Pragati ; Boyd, I.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
The authors report on a new and simple growth technology which is capable of producing ultra-thin oxides ( approximately= 40 AA) on silicon at temperatures below 500 degrees C. Preliminary growth and electrical measurements are discussed.
Keywords :
electronic conduction in insulating thin films; insulating thin films; oxidation; semiconductor technology; silicon compounds; 40 AA; 500 degC; O 3; Si; SiO 2-Si; UV/ozone oxidation; atmospheric pressure; electrical measurements; growth technology; low temperature; semiconductor processing; ultra-thin oxides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900138
