Author :
Steiner, Klaus ; Mikami, Hitoshi ; Uchitomi, Naotaka ; Toyoda, Nobuyuki
Abstract :
Gate-voltage-dependent mobility profiles in long-, short-, wide-, and narrow-channel WNx-BPLDD (buried p-type buffer lightly doped drain region) GaAs MESFETs have been determined (LG =10, 4, 2, 1, 0.8, 0.5, 0.3 μm, WG=20 μm; WG-100, 40, 20, 10, 4, 2 μm, L G=0.5 μm). The mobility mainly depends on the channel width, while the gate length has much less influence. Thus, using proper gate dimensions the channel mobility can be tuned. The highest drift mobility values agree quite well with the measured Hall mobilities. Mobility profiles of large-area MESFETs are probably degraded by the WN x-gate fabrication process. Injected excess charges at gate length below 0.5 μm distorts the mobility evaluations
Keywords :
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; gallium arsenide; tungsten; 0.3 to 10 micron; GaAs; Hall mobilities; MESFET channels; WNx-GaAs; WNx-gate fabrication; buried p-type buffer lightly doped drain region; channel mobility tuning; channel width; drift mobility; gate length; gate voltage dependent mobility profiles; injected excess charges; narrow-channel; short channel; Buffer layers; Degradation; Distortion measurement; Fabrication; Gallium arsenide; Hall effect; Large scale integration; MESFETs; Optical distortion; Voltage;
