Title :
Transconductance dependence on gate length for GaAs gate pseudomorphic and conventional SISFETs at 300 and 77K
Author :
Schmidt, P.E. ; Barbier, E. ; Collot, P. ; Gaonach, C. ; Champagne, M. ; Pons, D.
Author_Institution :
Thomson-CSF Central Res., Labs., Orsay, France
Abstract :
The authors report on the transconductance dependence on gate length for pseudomorphic (PM-) and conventional GaAs gate SISFETs. With and identical material structure, except for the GaInAs channel, PM-SISFETs have higher transconductances at room temperature, for gate lengths between 1 mu m and 19 mu m. At 77 K, however it is shown that higher transconductances are obtained with conventional SISFETs having gate lengths larger than 2 mu m.
Keywords :
III-V semiconductors; gallium arsenide; insulated gate field effect transistors; 1 to 19 micron; 300 K; 77 K; GaAs gate; GaInAs channel; GaInAs-GaAs; III-V semiconductors; SISFETs; conventional devices; gate length; pseudomorphic devices; room temperature; transconductance dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900141
