• DocumentCode
    1304699
  • Title

    A Subthreshold to Above-Threshold Level Shifter Comprising a Wilson Current Mirror

  • Author

    Lütkemeier, Sven ; Rückert, Ulrich

  • Author_Institution
    Dept. of Syst. & Circuit Technol., Univ. of Paderborn, Paderborn, Germany
  • Volume
    57
  • Issue
    9
  • fYear
    2010
  • Firstpage
    721
  • Lastpage
    724
  • Abstract
    In this brief, we propose a novel level shifter circuit that is capable of converting subthreshold to above-threshold signal levels. In contrast to other existing implementations, it does not require a static current flow and can therefore offer considerable static power savings. The circuit has been optimized and simulated in a 90-nm process technology. It operates correctly across process corners for supply voltages from 100 mV to 1 V on the low-voltage side. At the target design voltage of 200 mV, the level shifter has a propagation delay of 18.4 ns and a static power dissipation of 6.6 nW. For a 1-MHz input signal, the total energy per transition is 93.9 fJ. Simulation results are compared to an existing subthreshold to above-threshold level shifter implementation from the paper of Chen et al.
  • Keywords
    current mirrors; low-power electronics; Wilson current mirror; above-threshold level shifter; power 6.6 nW; propagation delay; size 90 nm; static current flow; static power savings; voltage 100 mV to 1 V; voltage 200 mV; Delay; MOSFETs; Power dissipation; Propagation delay; Robustness; Simulation; Level shifter; multivoltage; subthreshold operation; ultralow power;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2010.2056110
  • Filename
    5557764