Application of E-beam recrystallization to three-layer image processor fabrication

Author

Hazama, Hiroaki ; Takahashi, Minoru ; Kambayashi, Sigeru ; Kemmochi, Masato ; Tsuchiya, Kenji ; Iida, Yoshinori ; Yano, Kensaku ; Inoue, Tomoyasu ; Yoshimi, Makoto ; Yoshii, Toshio ; Tango, Hiroyuki

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

38

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

47

Lastpage

54

Abstract

E-beam recrystallization has been applied to the fabrication of a three-layer processor. The seed structure and the E-beam conditions were successfully optimized so that a large-area SOI as wide as 1 mm was recrystallized without void generation with no damage to underlying devices. The actual SOI area in the device, 850×1100 μm, was recrystallized with one E-beam scan by aligning its position. The three-layer image processor was capable of visual image sensing with a feature outline extraction in a parallel processing manner. Normal operations of the fundamental functions have been confirmed, demonstrating the feasibility of E-beam recrystallization for three-dimensional IC application

Keywords

MOS integrated circuits; electron beam annealing; image sensors; integrated circuit technology; recrystallisation annealing; semiconductor-insulator boundaries; MOS technology; electron beam recrystallisation; feature outline extraction; large-area SOI; parallel processing; seed structure; three-dimensional IC; three-layer image processor; visual image sensing; Annealing; Application specific integrated circuits; Circuit synthesis; Epitaxial growth; Fabrication; Feature extraction; Image edge detection; Integrated circuit interconnections; Parallel processing; Stacking;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.65735

Filename

65735