• DocumentCode
    1304719
  • Title

    Growth of high quality InP with metal organic molecular beam epitaxy

  • Author

    Heinecke, H. ; Hoger, R. ; Baur, B.

  • Author_Institution
    Siemens AG, Munchen, West Germany
  • Volume
    26
  • Issue
    3
  • fYear
    1990
  • Firstpage
    213
  • Lastpage
    214
  • Abstract
    The authors report on the growth of high quality InP by metal organic molecular beam epitaxy (MOMBE). InP layers were grown exhibiting Hall mobilities of up to 132000 cm2/Vs at T=77K with a background free electron concentration of around 2*1014 cm-3. These good electrical results were obtained along with a high optical quality.
  • Keywords
    Hall effect; III-V semiconductors; electronic conduction in crystalline semiconductor thin films; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; Hall mobilities; InP; MOMBE; background free electron concentration; high optical quality; high quality layers; metal organic molecular beam epitaxy; semiconductor growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900143
  • Filename
    82561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1304719