DocumentCode :
1304719
Title :
Growth of high quality InP with metal organic molecular beam epitaxy
Author :
Heinecke, H. ; Hoger, R. ; Baur, B.
Author_Institution :
Siemens AG, Munchen, West Germany
Volume :
26
Issue :
3
fYear :
1990
Firstpage :
213
Lastpage :
214
Abstract :
The authors report on the growth of high quality InP by metal organic molecular beam epitaxy (MOMBE). InP layers were grown exhibiting Hall mobilities of up to 132000 cm2/Vs at T=77K with a background free electron concentration of around 2*1014 cm-3. These good electrical results were obtained along with a high optical quality.
Keywords :
Hall effect; III-V semiconductors; electronic conduction in crystalline semiconductor thin films; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; Hall mobilities; InP; MOMBE; background free electron concentration; high optical quality; high quality layers; metal organic molecular beam epitaxy; semiconductor growth;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900143
Filename :
82561
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1304719
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