• DocumentCode
    1304726
  • Title

    High-power CW operation of broad area InGaAlP visible light laser diodes

  • Author

    Itaya, Kazuhiko ; Hatakoshi, G. ; Watanabe, Yoshihiro ; Ishikawa, Masatoshi ; Uematsu, Yutaka

  • Author_Institution
    Toshiba Res. & Dev. Center, Kawasaki, Japan
  • Volume
    26
  • Issue
    3
  • fYear
    1990
  • Firstpage
    214
  • Lastpage
    215
  • Abstract
    Broad area InGaAlP visible light laser diodes with antireflection and high-reflection coatings have been fabricated. High power CW operation above 300 mW was obtained at 2 degrees C heat-sink temperature. This value corresponded to a light power density of 2.7 MW/cm2. The far field pattern showed a single lobe shape for output power up to 100 mW.
  • Keywords
    III-V semiconductors; aluminium compounds; antireflection coatings; gallium compounds; indium compounds; semiconductor junction lasers; 100 to 300 mW; 2 degC; CW operation; InGaAlP; antireflection coatings; broad area; far field pattern; heat-sink temperature; high power operation; high-reflection coatings; semiconductor lasers; single lobe shape; visible light laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900144
  • Filename
    82562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1304726