Characterization and implementation of self-aligned TiSi2 in submicrometer CMOS technology

Characterization and process implementation of a self-aligned TiSi ₂ in a submicrometer CMOS process are presented. The effects of different in situ sputter etch configurations prior to Ti deposition on silicidation is discussed. It is shown that bridging is not only first RTP time- and temperature-dependent, but also dependent on the Ti(N) overetch time. The C49 to C54-TiSi₂ phase transformation is found to be dependent on both the C49-TiSi₂ film thickness and the linewidth. A potential degradation phenomenon with high-temperature back-end processing is discussed, and the impact of TiSi₂ on specific contact resistance and circuit performance is presented. Thin film analysis was done by Auger electron spectrometry, Rutherford backscattering spectrometry with 2-MeV He⁺ , transmission electron microscopy, secondary ion mass spectrometry, X-ray diffraction, and X-ray fluorescence spectrometry. Sheet resistance measurements were carried out with a four-point probe