Excess low-frequency noise in PtSi on p-type Si Schottky diodes

Author

Mooney, Jonathan M.

Author_Institution

Rome Air Dev. Center, Hanscom AFB, MA, USA

Volume

38

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

160

Lastpage

166

Abstract

The power spectrum for platinum silicide on p-type silicon Schottky diodes has been measured for the diodes available on an infrared focal plane array. A careful experimental technique is used to separate the mutual drift of the array as a whole from the drift of the individual diodes. The power spectrum of the noise associated with the diode appears to be white, even for frequencies below 3.0×10^-5 Hz. This result is compared with recent models of 1/f noise. The measurements were made on an infrared camera that used a 160×244 PtSi infrared focal plane array. The data from each pixel were digitized to 12 b (0-4095 ADUs). The digital data were transferred to a Hewlett-Packard series 300 computer via the GPIO bus. The camera operated at 30 frames/s

Keywords

Schottky-barrier diodes; electron device noise; infrared detectors; infrared imaging; platinum compounds; random noise; silicon; 1/f noise; 160 pixel; 244 pixel; 39040 pixel; PtSi-Si; Schottky diodes; Si; infrared focal plane array; low-frequency noise; p-type; power spectrum; white noise; Cameras; Charge coupled devices; Force measurement; Low-frequency noise; Noise measurement; Platinum; Schottky barriers; Schottky diodes; Silicides; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.65750

Filename

65750