Deep-UVsensors based on SAW oscillators using low-temperature-grown AlN films on sapphires

Author

Laksana, C.P. ; Chen, Meng Chang ; Liang, Y.L. ; Tzou, A.T. ; Kao, H.K. ; Jeng, E.S. ; Chen, J.S.C. ; Chen, Hung Chi ; Jian, S.J.

Author_Institution

Dept. of Electron. Eng., Chung Yuan Christian Univ., Chungli, Taiwan

Volume

58

Issue

8

fYear

2011

fDate

8/1/2011 12:00:00 AM

Firstpage

1688

Lastpage

1693

Abstract

High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.

Keywords

aluminium compounds; epitaxial layers; nitrogen compounds; remote sensing; sapphire; surface acoustic wave filters; surface acoustic wave oscillators; ultraviolet detectors; AlN; SAW device; SAW oscillator; UV sensor; deep UV light detection; frequency 354.2 MHz; frequency 43 kHz; low-temperature-grown AlN film; remote sensor; sapphire substrate; size 200 nm; velocity 5667 m/s; Acoustic waves; Films; Oscillators; Sputtering; Substrates; Surface acoustic wave devices;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2011.1997

Filename

5995227