DocumentCode
1304996
Title
Effects of Post-Deposition Annealing and Oxygen Content on the Structural and pH-Sensitive Properties of Thin Nd 
O . The thin Nd<sub>2</sub>O<sub>3</sub> electrolyte-insulator-semiconductor devices prepared under a 15/10 flow ratio with subsequent annealing at 700degC exhibited a higher sensitivity (56.01 mV/pH, in the solutions from pH 2 to 12), a smaller hysteresis voltage (4.7 mV in the pH loop 7 rarr 4 rarr 7rarr 10 rarr 7), and a lower drift rate (0.41 mV/h in the pH 7 buffer solution) than did those prepared at the other conditions. We attribute this behavior to the optimal oxygen content in this oxide film forming a high density of binding sites and a small surface roughness.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>X-ray diffraction; X-ray photoelectron spectra; annealing; atomic force microscopy; chemical sensors; neodymium compounds; pH; semiconductor-insulator boundaries; sputter deposition; surface roughness; thin films; Nd<sub>2</sub>O<sub>3</sub>; Si; X-ray diffraction; X-ray photoelectron spectroscopy; atomic-force microscopy; binding sites; electrolyte-insulator-semiconductor devices; hysteresis voltage; optimal oxygen content; oxygen content; pH-sensitive properties; post-deposition annealing effects; reactive sputtering; silicon substrates; structural properties; surface roughness; temperature 600 C to 800 C; voltage 4.7 mV; Annealing; Biomembranes; Neodymium; Oxygen; Silicon; Spectroscopy; Sputtering; Substrates; X-ray diffraction; X-ray imaging; Electrolyte-insulator-semiconductor (EIS) sensor; Nd<formula formulatype=)
$_{2}$ O$_{3}$
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2009.2027417
Filename
5210229
Link To Document