• DocumentCode
    1305211
  • Title

    MESFET fabrication on MOCVD grown Hg1-xCdxTe

  • Author

    Leech, P.W. ; Gwynn, P.J. ; Pain, G.N. ; Petkovic, N. ; Thompson, J.

  • Author_Institution
    Res. Labs., Telecom Australia, Clayton, Vic., Australia
  • Volume
    26
  • Issue
    4
  • fYear
    1990
  • Firstpage
    221
  • Lastpage
    222
  • Abstract
    The fabrication of the first MESFET structures on Hg1-xCdxTe is reported using MOCVD grown layers on GaAs substrates. The 6 mu m gate devices exhibited a room temperature transconductance of 1.0 mS/mm and pinch off voltage of -4.0 V. The Schottky barrier characteristics of the devices were critically dependent on the stoichiometric x ratio of the Hg1-xCdxTe with diode formation evident only at x >0.5.
  • Keywords
    II-VI semiconductors; Schottky gate field effect transistors; cadmium compounds; mercury compounds; semiconductor growth; vapour phase epitaxial growth; -4 V; 1 mS; 6 micron; GaAs; GaAs substrates; Hg 1-xCd xTe; II-VI semiconductors; MESFET fabrication; MOCVD grown layers; Schottky barrier characteristics; gate length; pinch off voltage; pinchoff voltage; room temperature transconductance; stoichiometric ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900149
  • Filename
    82571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1305211