$\\hbox {1}/f$ Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

Author

Beneventi, Giovanni Betti ; Ferro, Massimo ; Fantini, Paolo

Author_Institution

Technol. & Device Modeling Team, Process R&D, Micron Technol., Agrate Brianza, Italy

Volume

33

Issue

11

fYear

2012

Firstpage

1559

Lastpage

1561

Abstract

In this letter, we study the low-frequency noise behavior of RESET-state Phase-Change Memory (PCM) devices belonging to a 45-nm technology node. Furthermore, by dealing with a typical case study, we calculate the fluctuation of the cell readout current induced by 1/f noise and provide predictions for estimating its effect in RESET-state PCM of future technology nodes.

Keywords

1/f noise; circuit noise; germanium compounds; phase change memories; 1/f noise; Ge₂Sb₂Te₅; PCM device; RESET-state phase-change memory device; cell readout current fluctuation; low-frequency noise behavior; memory readout operation; scaling perspective; size 45 nm; 1f noise; Amorphous materials; Low-frequency noise; Phase change memory; Phase change random access memory; $hbox{1}/f$ noise; $hbox{Ge}_{2}hbox{Sb}_{2}hbox{Te}_{5}$ (GST); Amorphous materials; Phase Change Random Access Memory (PCRAM); Phase-Change Memory (PCM); chalcogenides; low-frequency noise; scaling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2214472

Filename

6320609