Title :
A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS
Author :
Xiao Xu ; Zheng Sun ; Kangyang Xu ; Xin Yang ; Kurniawan, Teddy ; Yoshimasu, Toshihiko
Author_Institution :
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
Abstract :
A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; low-power electronics; CMOS; back gate effect; drain efficiency; frequency 2.5 GHz; low-voltage class-E power amplifier IC; saturated output power; short-range wireless communications; size 180 nm; voltage 0.5 V to 1.5 V; CMOS integrated circuits; Gain; Logic gates; Power amplifiers; Transistors; Voltage measurement; CMOS; Class-E; Low-voltage; Power amplifier; Short range communications;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on
Conference_Location :
Hefei
DOI :
10.1109/RFIT.2014.6933241
