A new extraction method of extrinsic elements of GaAs/GaN HEMTs

A new extraction approach of extrinsic parameters of GaAs/GaN HEMTs is present. This method is able to extract the extrinsic elements from just one set of S-parameters under weakly pinch off condition which biases the gate with a voltage slightly below the pinch off point, thus avoids any gate degradation and additional relationship for determining parasitic resistances in the conventional method. Since the internal part is extremely simplified at this bias condition, artificial bee colony algorithm (ABC) is employed to optimize the reduced equivalent circuit parameters (ECPs) to achieve good agreement between the simulated and measured S-parameters. The extraction is fast, robust and with satisfying accuracy. Moreover, this method can be easily extended to different transistor devices with various semiconductor manufacturing processes and external topologies. This method is verified by 2×50 um GaAs HEMT at 99 bias points from 1 GHz to 50 GHz.