Title :
RF sputtered PLZT thin film on Pt/Ti electrode
Author :
Lu, D.X. ; Pun, Edwin Y B ; Wong, E.M.W. ; Chung, P.S. ; Lee, Z.Y.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong
fDate :
5/1/1997 12:00:00 AM
Abstract :
PLZT (7.5/65/35) thin films were deposited by rf magnetron sputtering on single crystal Si substrates using an oxide sintered target with excess PbO. The effects of postannealing and bottom Pt/Ti electrodes on the thin film crystal structures and ferroelectric properties were studied. Film deposited at 200/spl deg/C or below crystallizes to a perovskite phase after annealing treatment at 550/spl deg/C or above, and the crystal structure depends on the annealing treatment. The best crystal structures and electronic properties were obtained when the thin films were annealed at 600/spl deg/C to 650/spl deg/C for 1 h in O/sub 2/. For the Pt/Ti two-layer bottom electrode, the thickness of the Ti layer has a dominant effect. When the Ti layer was too thick or too thin, the PLZT thin film structures consist mainly of pyrochlore phases. However, using an appropriate Ti layer thickness, PLZT thin films having good crystal structures and ferroelectric properties can be obtained, with typical remanent polarization value of 220 mC/m/sup 2/ and coercive field strength of 6.5 MV/m.
Keywords :
annealing; ferroelectric thin films; lanthanum compounds; lead compounds; piezoceramics; sputtered coatings; 200 C; 550 to 650 C; PLZT; PLZT thin film; PbLaZrO3TiO3; Pt-Ti; Pt/Ti two-layer bottom electrode; RF magnetron sputtering; annealing; coercive field strength; crystal structure; ferroelectric properties; oxide sintered target; perovskite phase; pyrochlore phase; remanent polarization; single crystal Si substrate; Annealing; Crystallization; Electrodes; Ferroelectric films; Ferroelectric materials; Radio frequency; Semiconductor thin films; Sputtering; Substrates; Transistors;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
