Uncertainties assessment of noise parameters in D- band using in situ tuner techniques

Author

Deng, Meixia ; Lepilliet, Sylvie ; Danneville, Frangois ; Dambrine, Gilles ; Gloria, Daniel ; Quemerais, Thomas ; Chevalier, P.

Author_Institution

IEMN, Univ. of Lille 1, Villeneuve d´Ascq, France

fYear

2014

fDate

27-30 Aug. 2014

Firstpage

1

Lastpage

3

Abstract

When transistor noise characterization becomes a difficult task at millimeter wave range, the accuracy on the resulting noise parameters is not or poorly discussed. Within this context, this paper aims to present a methodology to estimate the uncertainties related to the extraction of the four noise parameters when using in situ tuner techniques, in the 130-170 GHz frequency range. B9MW SiGe HBT from STMicroelectonics was used as a test vehicle for the noise characterization and uncertainties assessment.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device noise; B9MW HBT; D-band; STMicroelectonics; SiGe; frequency 130 GHz to 170 GHz; noise parameters; transistor noise characterization; tuner techniques; uncertainties assessment; Heterojunction bipolar transistors; Noise; Noise measurement; Silicon germanium; Tuners; Uncertainty; D-band; Noise power measurement; Silicium Germanium (SiGe); heterojunction bipolar transistors (HBT); in situ source-pull tuner; millimeter wave; noise characterization; noise parameters extraction; uncertainties;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on

Conference_Location

Hefei

Type

conf

DOI

10.1109/RFIT.2014.6933261

Filename

6933261