Title :
SIMON-A simulator for single-electron tunnel devices and circuits
Author :
Wasshuber, Christoph ; Kosina, Hans ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
fDate :
9/1/1997 12:00:00 AM
Abstract :
SIMON is a single electron tunnel device and circuit simulator that is based on a Monte Carlo method. It allows transient and stationary simulation of arbitrary circuits consisting of tunnel junctions, capacitors, and voltage sources of three kinds: constant, piecewise linearly time dependent, and voltage controlled. Cotunneling can be simulated either with a plain Monte Carlo method or with a combination of the Monte Carlo and master equation approach. A graphic user interface allows the quick and easy design of circuits with single-electron tunnel devices. Furthermore, as an example of the usage of SIMON, we discuss the essential problem of random background charge and present possible solutions
Keywords :
Monte Carlo methods; circuit analysis computing; master equation; quantum interference devices; semiconductor device models; tunnelling; Coulomb blockade; Monte Carlo method; SIMON; capacitor; circuit simulator; constant voltage source; cotunneling; graphic user interface; master equation; piecewise linearly time dependent voltage source; random background charge; single-electron tunnel device; stationary simulation; transient simulation; tunnel junction; voltage controlled voltage source; Analytical models; Capacitors; Circuit simulation; Computational modeling; Conductivity; Electrons; Equations; Monte Carlo methods; Probability; Voltage control;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
