• DocumentCode
    1305792
  • Title

    High-power single mode InGaAs/AlGaAs laser diodes at 910 nm

  • Author

    Welch, D.F. ; Cardinal, M. ; Streifer, B. ; Scifres, D.

  • Author_Institution
    Spectra Diode Labs., San Jose, CA, USA
  • Volume
    26
  • Issue
    4
  • fYear
    1990
  • Firstpage
    233
  • Lastpage
    234
  • Abstract
    Single mode laser diodes have been fabricated from pseudomorphic InGaAs/AlGaAs quantum well epitaxial material operating up to 350 mW CW. The laser output is a single transverse and longitudinal mode to 180 mW, while the spectral output is centred near 910 nm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; laser transitions; semiconductor epitaxial layers; semiconductor junction lasers; 180 mW; 350 mW; 910 nm; InGaAs-AlGaAs; high power type; laser diodes; longitudinal mode; pseudomorphic material; quantum well epitaxial material; semiconductor lasers; single mode; transverse mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900157
  • Filename
    82579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1305792