DocumentCode
1305797
Title
Low noise characteristics of a GaAs-AlGaAs multiple-quantum-well semiconductor laser amplifier
Author
Saitoh, Tadashi ; Suzuki, Yoshio ; Tanaka, Hidenao
Author_Institution
NTT Corp., Tokyo, Japan
Volume
2
Issue
11
fYear
1990
Firstpage
794
Lastpage
796
Abstract
Low noise characteristics are experimentally demonstrated in a multiple-quantum-well laser amplifier. The measured noise figure of a GaAs-AlGaAs traveling-wave laser amplifier at a 20 dB signal gain was found to be 4.6 dB. This is the smallest value reported for semiconductor laser amplifiers. A signal gain of 20 dB was obtained at a low bias current of 23.5 mA.<>
Keywords
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; semiconductor junction lasers; 20 dB; 23.5 mA; GaAs-AlGaAs; diode laser noise; low bias current; multiple-quantum-well semiconductor laser amplifier; noise characteristics; noise figure; signal gain; traveling-wave laser amplifier; Charge carrier density; Laser noise; Low-noise amplifiers; Noise figure; Optical amplifiers; Optical noise; Quantum well devices; Semiconductor device noise; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.63224
Filename
63224
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