Title :
InGaAs-InAlAs quantum well intersecting waveguide switch operating at 1.55 mu m
Author :
Zucker, J.E. ; Jones, K.L. ; Jacobovitz, G.R. ; Tell, B. ; Brown-Goebeler, K. ; Chang, T.Y. ; Sauer, N.J. ; Divino, M.D. ; Wegener, M. ; Chemla, D.S.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
The first electrooptic waveguide switch based on voltage-controlled transfer of electrons into multiple quantum wells is demonstrated. This mechanism is named barrier, reservoir, and quantum well electron transfer (BRAQWET) In GaAs-InAlAs quantum wells it provides a large modulation of refractive index at 1.55 mu m with multigigahertz switching capability. The BRAQWET X-switch is free from heating and speed limitations associated with current injection. Beam propagation method (BPM) calculations suggest that the crosstalk performance of this preliminary device demonstration can be significantly enhanced by changes in waveguide geometry.<>
Keywords :
III-V semiconductors; aluminium compounds; crosstalk; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical switches; optical waveguides; semiconductor quantum wells; semiconductor switches; 1.55 micron; BRAQWET; BRAQWET X-switch; InGaAs-InAlAs quantum well intersecting waveguide switch; barrier electron transfer; beam propagation method; crosstalk performance; current injection; electrooptic waveguide switch; multigigahertz switching capability; multiple quantum wells; quantum well electron transfer; refractive index modulation; reservoir electron transfer; voltage-controlled transfer; waveguide geometry; Crosstalk; Electrons; Electrooptical waveguides; Geometry; Heating; Refractive index; Reservoirs; Switches; Voltage; Waveguide transitions;
Journal_Title :
Photonics Technology Letters, IEEE
