GaAs MESFET fabrication without using photoresist

Author

Shiralagi, K. ; Tsui, R. ; Goronkin, H.

Author_Institution

Phoenix Corporate Res. Labs., Motorola Inc., Tempe, AZ, USA

Volume

19

Issue

2

fYear

1998

Firstpage

57

Lastpage

59

Abstract

MBE-grown MESFET wafers were patterned with a novel resistless approach and InAs was selectively grown in the source and drain regions. Photoresist and the associated process steps and chemicals were eliminated by utilizing gallium oxide as the masking material. Metallization for the source, drain and self aligned gate was carried out in one step, also without using any photoresist. Device structures with gate lengths ranging from submicron to 10 μm were fabricated.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; photolithography; semiconductor device metallisation; semiconductor technology; 0.6 to 10 mum; Ga/sub 2/O/sub 3/; Ga/sub 2/O/sub 3/ masking material; GaAs; GaAs MESFET fabrication; InAs-GaAs; MBE-grown MESFET wafers patterning; drain region; gate length; metallization; photolithography; resistless approach; selective InAs growth; self aligned gate; source region; Chemical processes; Etching; Fabrication; Gallium arsenide; MESFETs; Metallization; Molecular beam epitaxial growth; Protection; Resists; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.658604

Filename

658604