Title :
A Three Stage, Fully Differential 128–157 GHz CMOS Amplifier with Wide Band Matching
Author :
Xu, Zhiwei ; Gu, Qun Jane ; Chang, Mau-Chung Frank
Author_Institution :
HRL Labs., LLC, Malibu, CA, USA
Abstract :
A fully differential amplifier has been realized in 65 nm CMOS technology, which has demonstrated 20 dB peak gain, over 10 dB gain from 128-157 GHz, and 40 GHz positive gain range from 126 to 166 GHz. By using cascode architecture with high bulk voltage tied to the cascode devices in deep-Nwell, the amplifier ensures stability and can use 2 V supply reliably. By inserting a π-matching network between cascode devices, it broadens the amplifier working range. This amplifier occupies 0.05 mm2 chip area, delivers over 5 dBm output power, and consumes 51 mA from a 2 V supply. To the authors´ best knowledge, this amplifier achieves the highest gain for CMOS amplifier beyond 100 GHz.
Keywords :
CMOS analogue integrated circuits; differential amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; π-matching network; cascode architecture; cascode devices; current 51 mA; deep-Nwell; frequency 126 GHz to 166 GHz; frequency 40 GHz; fully differential CMOS amplifier; gain 20 dB; size 65 nm; voltage 2 V; wideband matching; CMOS integrated circuits; Capacitors; Couplings; Gain; Impedance matching; Radiofrequency integrated circuits; Semiconductor device modeling; CMOS; Cascode amplifier; D-band; PAE; output ${rm P}_{1 {rm dB}}$;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2011.2163928
