Quantum-well SEED optical oscillators

Author

Giles, C. Randy ; Wood, Thomas H. ; Burrus, Charles A., Jr.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

26

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

512

Lastpage

518

Abstract

Oscillation at 110 MHz in a GaAs-GaAlAs quantum-well SEED (self-electrooptic effect device) optical oscillator is considered. Optimization of device length and optical pump wavelength for high-frequency oscillation is discussed. Frequency tuning is obtained by adjusting the oscillator bias voltage or optical pump power, and the oscillator can be injection locked to modulated optical signals. Frequency fluctuations caused by perturbative Gaussian noise and 1/f frequency noise are observed; the 1/f noise in an 8.5-MHz oscillator limited the minimum frequency variance to 230 Hz²

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; fluctuations; gallium arsenide; gallium compounds; optical bistability; optical modulation; optical pumping; random noise; semiconductor quantum wells; 1/f frequency noise; 110 MHz; 8.5 MHz; GaAs-GaAlAs; GaAs-GaAlAs quantum-well; SEED optical oscillators; device length; frequency fluctuations; frequency tuning; high-frequency oscillation; injection locked; minimum frequency variance; modulated optical signals; optical bistability; optical pump power; optical pump wavelength; oscillator bias voltage; perturbative Gaussian noise; self-electrooptic effect device; Frequency; Gaussian noise; Injection-locked oscillators; Optical devices; Optical modulation; Optical noise; Optical pumping; Optical tuning; Quantum well devices; Quantum wells;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.52128

Filename

52128