Title :
Closed-Form Analytical Expression for the Conductive and Dissipative Parameters of the MOS-C Equivalent Circuit
Author :
Daliento, S. ; Tari, O. ; Lancellotti, L.
Author_Institution :
Dept. of Electron. Eng., Univ. of Naples Federico II, Naples, Italy
Abstract :
The overall conductance of a metal-oxide-semiconductor structure, biased in the inversion regime, is described as the superposition of terms depending either on the minority carrier conductance GN or on the interface state dissipative contribution Rit. Derived analytical expressions are suitable for closed-form solutions allowing the extraction of the aforementioned parameters.
Keywords :
MIS structures; MOS capacitors; equivalent circuits; minority carriers; MOS-C equivalent circuit; closed-form analytical expression; conductive parameters; dissipative contribution; dissipative parameters; interface state; inversion regime; metal-oxide-semiconductor structure; minority carrier conductance; Analytical models; Equations; Equivalent circuits; Integrated circuit modeling; Mathematical model; Semiconductor process modeling; Solids; $G$– $f$ analysis; metal–oxide–semiconductor capacitance (MOS-C) equivalent circuit; parameters extraction;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2162847
