DocumentCode :
1306088
Title :
Experimental Investigations of Characteristic Temperatures of Hybrid Silicon Lasers
Author :
Park, Heejung ; Srinivasan, P. ; Davenport, Michael L. ; Sysak, Mathew N. ; Jones, Roy
Author_Institution :
Photonics Technology Laboratory, Intel Corporation, Santa Clara, CA, USA
Volume :
48
Issue :
12
fYear :
2012
Firstpage :
1512
Lastpage :
1518
Abstract :
This paper investigates the characteristic temperatures of hybrid silicon lasers by decomposing them into the temperature dependency of modal gain, transparent current density, internal loss, and injection efficiency under pulsed operation, and comparing them to III–V broad area lasers fabricated using the same InP epitaxial structure. This paper reveals that the limiting factors of the characteristic temperatures for both types of lasers are the transparent current density and injection efficiency. The comparison suggests that there is no fundamental aspect in the hybrid laser architecture that degrades the characteristic temperatures.
Keywords :
Measurement by laser beam; Optical interconnections; Photonics; Semiconductor lasers; Silicon devices; Temperature measurement; Hybrid silicon laser; optical interconnects; semiconductor laser; silicon photonics;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2012.2222870
Filename :
6323004
Link To Document :
بازگشت