Title :
Bootstrapped pad protection structure
Author_Institution :
Syst. Products Group, Nat. Semicond. Corp., Santa Clara, CA, USA
fDate :
2/1/1998 12:00:00 AM
Abstract :
All electrostatic discharge (ESD) pad protection structures have a nonlinear capacitor associated with a reversed biased p-n-junction. This paper discusses the distortion introduced by this nonlinear input capacitance given a finite signal source impedance and proposes a bootstrapped circuit to alleviate the problem. Experimental results are also presented
Keywords :
CMOS analogue integrated circuits; bootstrap circuits; capacitance; electric distortion; electrostatic discharge; CMOS; bootstrapped pad protection structure; electrostatic discharge; finite signal source impedance; input capacitance; nonlinear capacitor; reversed biased p-n-junction; Atherosclerosis; Band pass filters; Capacitance; Circuit simulation; Distortion; Electrostatic discharge; Impedance; Power harmonic filters; Protection; Semiconductor diodes;
Journal_Title :
Solid-State Circuits, IEEE Journal of
