• DocumentCode
    1306092
  • Title

    Bootstrapped pad protection structure

  • Author

    Opris, Ion E.

  • Author_Institution
    Syst. Products Group, Nat. Semicond. Corp., Santa Clara, CA, USA
  • Volume
    33
  • Issue
    2
  • fYear
    1998
  • fDate
    2/1/1998 12:00:00 AM
  • Firstpage
    300
  • Lastpage
    301
  • Abstract
    All electrostatic discharge (ESD) pad protection structures have a nonlinear capacitor associated with a reversed biased p-n-junction. This paper discusses the distortion introduced by this nonlinear input capacitance given a finite signal source impedance and proposes a bootstrapped circuit to alleviate the problem. Experimental results are also presented
  • Keywords
    CMOS analogue integrated circuits; bootstrap circuits; capacitance; electric distortion; electrostatic discharge; CMOS; bootstrapped pad protection structure; electrostatic discharge; finite signal source impedance; input capacitance; nonlinear capacitor; reversed biased p-n-junction; Atherosclerosis; Band pass filters; Capacitance; Circuit simulation; Distortion; Electrostatic discharge; Impedance; Power harmonic filters; Protection; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.658635
  • Filename
    658635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306092