Title :
Detectivity of gallium arsenide on silicon substrate photoconductive detectors
Author :
Constant, M. ; Decoster, D. ; Bartenlian, B. ; Pascal, D.
Author_Institution :
Lab. de Spectrochimie Infrarouge et Raman, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´Ascq, France
Abstract :
Planar photoconductors made with GaAs on silicon substrate have been studied with respect to static and dynamic responsivities as well as noise levels, in the 1 Hz-100 kHz frequency range. The results obtained have led to the determination of the specific detectivity which is in turn compared to those of GaAs planar photoconductors and Si photodiodes.
Keywords :
III-V semiconductors; dynamic response; electron device noise; gallium arsenide; photoconducting devices; photodetectors; 1 Hz to 100 kHz; GaAs-Si; III-V semiconductors; Si substrate; dynamic responsivities; noise levels; photoconductive detectors; static response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900161
